high-energy ion implantation

См. также в других словарях:

• high-energy ion implantation — didelės energijos jonų implantavimas statusas T sritis radioelektronika atitikmenys: angl. high energy ion implantation vok. energiereiche Ionenimplantierung, f; Implantierung von Ionen hoher Energie, f rus. имплантация ионов высокой энергии, f… …   Radioelektronikos terminų žodynas

• Ion implantation — is a materials engineering process by which ions of a material can be implanted into another solid, thereby changing the physical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as… …   Wikipedia

• implantation d'ions à grande énergie — didelės energijos jonų implantavimas statusas T sritis radioelektronika atitikmenys: angl. high energy ion implantation vok. energiereiche Ionenimplantierung, f; Implantierung von Ionen hoher Energie, f rus. имплантация ионов высокой энергии, f… …   Radioelektronikos terminų žodynas

• Ion beam — An ion beam is a type of particle beam consisting of ions. Ion beams have many uses in electronics manufacturing (principally ion implantation) and other industries. Today s ion beam sources are typically derived from the mercury vapor thrusters… …   Wikipedia

• Ion Beam Mixing — is a process for adhering two multilayers, especially a substrate and deposited surface layer. The process involves bombarding layered samples with doses of ion radiation in order to promote mixing at the interface, and generally serves as a… …   Wikipedia

• Threshold displacement energy — The threshold displacement energy Td is the minimum kinetic energy that an atom in a solid needs to be permanently displaced from its lattice site to a defect position. It is also known as displacement threshold energy or just displacement energy …   Wikipedia

• Focused ion beam — Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor and materials science fields for site specific analysis, deposition, and ablation of materials. The FIB is a scientific instrument that resembles a… …   Wikipedia

• List of Strange Days at Blake Holsey High characters — This is a list of fictional characters in the Canadian science fiction television series Strange Days at Blake Holsey High. Contents 1 Josie Trent 2 Corrine Baxter 3 Lucas Randall 4 Marsha …   Wikipedia

• Characters of Strange Days at Blake Holsey High — This is a list of fictional characters in the Canadian science fiction television series Strange Days at Blake Holsey High .Josie TrentJosie Trent (Emma Taylor Isherwood) is a human whirlwind, skate punk girl and the fire behind the Science Club …   Wikipedia

• Static secondary ion mass spectrometry — Static secondary ion mass spectrometry, or static SIMS is a technique for chemical analysis including elemental composition and chemical structure of the uppermost atomic or molecular layer of a solid which may be a metal, semiconductor or… …   Wikipedia

• Deep reactive-ion etching — (DRIE) is a highly anisotropic etch process used to create deep penetration, steep sided holes and trenches in wafers, with aspect ratios of 20:1 or more. It was developed for microelectromechanical systems (MEMS), which require these features,… …   Wikipedia